| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 30 | |
| 25 | |
| 4.5 | |
| -55 to 150 | |
| 0.8@1mA@10mA | |
| 0.5@1mA@10mA | |
| 0.05 | |
| 50 | |
| 400@100uA@5V|450@1mA@5V|400@10mA@5V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
ON Semiconductor has the solution to your circuit's high-voltage requirements with their NPN MMBT5089LT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 4.5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
Playbook: Smarte Drohnen-Systeme
Downloaden Sie das Playbook für praxisnahe Tools und Strategien zur Entwicklung agiler, effizienter und modularer Drohnensysteme.