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onsemiMMBT5551LT1GGP BJT
Trans GP BJT NPN 160V 0.6A 300mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 180 | |
| 160 | |
| 6 | |
| -55 to 150 | |
| 1@1mA@10mA|1@5mA@50mA | |
| 0.15@1mA@10mA|0.2@5mA@50mA | |
| 0.6 | |
| 50 | |
| 80@1mA@5V|80@10mA@5V|30@50mA@5V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 |
| Verpackungsbreite | 1.3 |
| Verpackungslänge | 2.9 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MMBT5551LT1G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
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