| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 80 | |
| 80 | |
| 4 | |
| 0.25@10mA@100mA | |
| 0.5 | |
| 100 | |
| 100@100mA@1V|100@10mA@1V | |
| 150 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.85 |
| Verpackungsbreite | 1.24 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SC-70 |
| 3 | |
| Leitungsform | Gull-wing |
Implement this versatile NPN MMBTA06WT1G GP BJT from ON Semiconductor into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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