onsemiMMBZ12VALT1GESE-Entstörer
ESD Suppressor Zener Uni-Dir/Bi-Dir 8.5V 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Zener | |
| Dual Common Anode|Single | |
| Uni-Directional|Bi-Directional | |
| 2 | |
| 8.5 | |
| 11.4 | |
| 12.6 | |
| 17 | |
| 2.35 | |
| 0.2 | |
| 1 | |
| 300 | |
| 40 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
If you're worried about electrostatic discharge to your electronic circuit, look no further, use this tvs MMBZ12VALT1G ESD protection device from ON Semiconductor for superior protection. This ESD diode has a maximum ESD protection device voltage of 16@HBM/0.4@MM kV. This device's maximum clamping voltage is 17 V. This ESD diode has an operating temperature range of -55 °C to 150 °C. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a dual common anode|single configuration.
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.

