Reduced Price
MagnaChip SemiconductorMMD60R360PBRHMOSFETs
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R
| Compliant | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 11 | |
| 100 | |
| 1 | |
| 380@10V | |
| 28@10V | |
| 28 | |
| 890@25V | |
| 83000 | |
| 30 | |
| 40 | |
| 80 | |
| 18 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.39(Max) mm |
| Verpackungsbreite | 6.1 mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? MagnaChip Semiconductor's MMD60R360PBRH power MOSFET can provide a solution. Its maximum power dissipation is 83000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with super junction technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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