MagnaChip SemiconductorMMD60R360PRHMOSFETs
Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) DPAK T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 4 | |
| 11 | |
| 100 | |
| 1 | |
| 380@10V | |
| 28@10V | |
| 28 | |
| 890@25V | |
| 83000 | |
| 30 | |
| 40 | |
| 80 | |
| 18 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.39(Max) |
| Verpackungsbreite | 6.1 |
| Verpackungslänge | 6.73(Max) |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Thanks to MagnaChip Semiconductor, both your amplification and switching needs can be taken care of with one component: the MMD60R360PRH power MOSFET. Its maximum power dissipation is 83000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with super junction technology. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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