MagnaChip SemiconductorMMD80R900PRHMOSFETs
Trans MOSFET N-CH 800V 6A 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Unconfirmed | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Unknown |
| PPAP | Unknown |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 3.5 | |
| 150 | |
| 6 | |
| 100 | |
| 1 | |
| 900@10V | |
| 17.6@10V | |
| 17.6 | |
| 574@25V | |
| 75800 | |
| 23.6 | |
| 22.4 | |
| 54.4 | |
| 12.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 30 | |
| 1.4 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.39(Max) mm |
| Verpackungsbreite | 6.1 mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? MagnaChip Semiconductor's MMD80R900PRH power MOSFET can provide a solution. Its maximum power dissipation is 75800 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This device utilizes super junction technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.