Diodes IncorporatedMMDT4126-7-FGP BJT

Implement this PNP MMDT4126-7-F GP BJT from Diodes Zetex to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 200 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 4 V.