Diodes IncorporatedMMSTA56-7-FGP BJT
Trans GP BJT PNP 80V 0.5A 200mW 3-Pin SOT-323 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 80 | |
| 80 | |
| 4 | |
| 1.2@100mA | |
| 0.25@10mA@100mA | |
| 0.5 | |
| 100@100mA@1V|100@10mA@1V | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.15 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-323 |
| 3 |
The PNP MMSTA56-7-F general purpose bipolar junction transistor, developed by Diodes Zetex, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 4 V. Its maximum power dissipation is 200 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 4 V.
| EDA / CAD Models |
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