onsemiMMUN2112LT1GDigital-BJT
Trans Digital BJT PNP 50V 0.1A 400mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Single | |
| 50 | |
| 0.1 | |
| 60@5mA@10V | |
| 22 | |
| 1 | |
| 0.25@0.3mA@10mA | |
| 400 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Are you in need of the digital form of a traditional bipolar junction transistor? The PNP MMUN2112LT1G digital transistor from ON Semiconductor is what you've been looking for. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 60@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.