| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Si | |
| Single | |
| 1 | |
| 50 | |
| 40 | |
| 5 | |
| 0.7@100mA@1A | |
| 1 | |
| 100 | |
| 55@10mA@1V|60@100mA@1V|50@1A@1V | |
| 1000 | |
| -55 | |
| 150 | |
| Fan-Fold | |
| Befestigung | Through Hole |
| Verpackungshöhe | 7.87(Max) mm |
| Verpackungsbreite | 4.19(Max) mm |
| Verpackungslänge | 5.21(Max) mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-92 |
| 3 | |
| Leitungsform | Formed |
Use this versatile PNP MPSW51ARLRPG GP BJT from ON Semiconductor to design various electronic circuits. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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