onsemiNCP5351MNR2GGate- und Leistungstreibern
Driver 4A 2-OUT High Side/Low Side Inv/Non-Inv 10-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8542330001 | |
| Automotive | No |
| PPAP | No |
| High Side|Low Side | |
| Inverting|Non-Inverting | |
| 2 | |
| Dependent | |
| MOSFET | |
| 2 | |
| 16 | |
| 21 | |
| 80 | |
| -0.3 | |
| 6.3 | |
| 1(Typ) | |
| 0.8(Max) | |
| 2(Min) | |
| 4(Typ) | |
| 0.6|0.5 | |
| -30 | |
| 85 | |
| Enable Control|Thermal Protection|Undervoltage Lockout | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95(Max) |
| Verpackungsbreite | 3 |
| Verpackungslänge | 3 |
| Leiterplatte geändert | 10 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN EP |
| 10 | |
| Leitungsform | No Lead |
Change state in a high power transistor by implementing this NCP5351MNR2G power driver by ON Semiconductor. This device has a maximum propagation delay time of 80 ns. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This gate driver has an operating temperature range of -30 °C to 85 °C. This device has a minimum operating supply voltage of -0.3 V and a maximum of 6.3 V.
| EDA / CAD Models |
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