onsemiNCP5901MNTBGGate- und Leistungstreibern
Driver 2-OUT High Side/Low Side Inv/Non-Inv 8-Pin DFN EP T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8542.39.00.90 | |
| Automotive | No |
| PPAP | No |
| High Side|Low Side | |
| Inverting|Non-Inverting | |
| 2 | |
| Dependent | |
| MOSFET | |
| 2 | |
| 35 | |
| 27(Typ) | |
| 35 | |
| 4.5 | |
| 13.2 | |
| 12.2(Typ) | |
| 0.7(Max) | |
| 3.4(Min) | |
| -10 | |
| 125 | |
| Overvoltage Protection|Under Voltage Lockout | |
| No | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.95(Max) |
| Verpackungsbreite | 2 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 8 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | DFN EP |
| 8 | |
| Leitungsform | No Lead |
Change state in a high power transistor by implementing this NCP5901MNTBG power driver by ON Semiconductor. This device has a maximum propagation delay time of 35 ns. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This gate driver has a minimum operating temperature of -10 °C and a maximum of 125 °C. This device has a minimum operating supply voltage of 4.5 V and a maximum of 13.2 V.
| EDA / CAD Models |
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