| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| ±30 | |
| 3.7 | |
| 1.5 | |
| 100 | |
| 1 | |
| 8500@10V | |
| 7.2@10V | |
| 7.2 | |
| 160@25V | |
| 46000 | |
| 21.3 | |
| 5.1 | |
| 16.5 | |
| 8 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.35(Max) mm |
| Verpackungsbreite | 2.38(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | IPAK |
| 3 | |
| Leitungsform | Through Hole |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? ON Semiconductor's NDD01N60-1G power MOSFET can provide a solution. Its maximum power dissipation is 46000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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