| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 30 | |
| 2.2 | |
| 4800@10V | |
| 10@10V | |
| 10 | |
| 274@25V | |
| 57000 | |
| 7 | |
| 7 | |
| 15 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? ON Semiconductor's NDD02N60ZT4G power MOSFET can provide a solution. Its maximum power dissipation is 57000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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