| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 2.6 | |
| 3300@10V | |
| 10@10V | |
| 10 | |
| 274@25V | |
| 58000 | |
| 7 | |
| 7 | |
| 15 | |
| 9 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.35(Max) mm |
| Verpackungsbreite | 2.38(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | IPAK |
| 3 | |
| Leitungsform | Through Hole |
Amplify electronic signals and switch between them with the help of ON Semiconductor's NDD03N50Z-1G power MOSFET. Its maximum power dissipation is 58000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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