| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 800 | |
| ±30 | |
| 2.9 | |
| 4500@10V | |
| 17@10V | |
| 17 | |
| 440@25V | |
| 96000 | |
| 9 | |
| 7 | |
| 17 | |
| 9 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.35(Max) mm |
| Verpackungsbreite | 2.38(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | IPAK |
| 3 | |
| Leitungsform | Through Hole |
Use ON Semiconductor's NDD03N80Z-1G power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 96000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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