| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 500 | |
| ±30 | |
| 4.7 | |
| 1500@10V | |
| 18.5@10V | |
| 18.5 | |
| 530@25V | |
| 83000 | |
| 14 | |
| 15 | |
| 24 | |
| 11 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.35(Max) mm |
| Verpackungsbreite | 2.38(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | IPAK |
| 3 | |
| Leitungsform | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The NDD05N50Z-1G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 83000 mW. This product comes in rail packaging to keep individual parts separated and protected. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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