| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 600 | |
| 30 | |
| 4.5 | |
| 8.4 | |
| 10000 | |
| 1 | |
| 950@10V | |
| 39@10V | |
| 39 | |
| 1140@25V | |
| 36000 | |
| 15 | |
| 22 | |
| 36 | |
| 14 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 15.3(Max) |
| Verpackungsbreite | 4.7(Max) |
| Verpackungslänge | 10.3(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220FP |
| 3 | |
| Leitungsform | Through Hole |
If you need to either amplify or switch between signals in your design, then ON Semiconductor's NDF08N60ZG power MOSFET is for you. Its maximum power dissipation is 36000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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