onsemiNE5517DR2GSP-Verstärker
SP Amp Transconductance Amplifier Dual ±22V/44V 16-Pin SOIC T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Transconductance Amplifier | |
| 2 | |
| 2 | |
| 75 to 85 | |
| 0.5@±15V | |
| 5@±15V | |
| ±22|44 | |
| 30 to 50 | |
| 44 | |
| ±22 | |
| 5@±15V | |
| 4@±15V | |
| 0.026(Typ)@±15V | |
| 1125 | |
| 0 | |
| 70 | |
| Tape and Reel | |
| Single|Dual | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.37 mm |
| Verpackungsbreite | 3.9 mm |
| Verpackungslänge | 9.9 mm |
| Leiterplatte geändert | 16 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | SOIC |
| 16 | |
| Leitungsform | Gull-wing |
Thanks to ON Semiconductor's transconductance amplifier NE5517DR2G differential amplifier, you will be able to clearly filter and analyze distorted audio samples. Its maximum power dissipation is 1125 mW. It has a maximum of ±22 V. This part has a minimum operating temperature of 0 °C and a maximum of 70 °C. It has 2 channels per chip. This device uses one or two power supplies.
| EDA / CAD Models |
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