onsemiNGTB15N60R2FGIGBT-Chip
Trans IGBT Chip N-CH 600V 24A 54W 3-Pin(3+Tab) TO-220F-3FS Tube
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.85 | |
| 24 | |
| 0.1 | |
| 54 | |
| -55 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 15.87 |
| Verpackungsbreite | 4.7 |
| Verpackungslänge | 10.16 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-220F-3FS |
| 3 | |
| Leitungsform | Through Hole |
This fast-switching NGTB15N60R2FG IGBT transistor from ON Semiconductor will be perfect in your circuit. Its maximum power dissipation is 54000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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