onsemiNGTB20N135IHRWGIGBT-Chip
Trans IGBT Chip N-CH 1350V 40A 394W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 1350 | |
| 2.2 | |
| 40 | |
| 0.1 | |
| 394 | |
| -40 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.34(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 16.25(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Don't be afraid to step up the amps in your device when using this NGTB20N135IHRWG IGBT transistor from ON Semiconductor. Its maximum power dissipation is 350000 mW. It has a maximum collector emitter voltage of 1350 V. This product comes in rail packaging to keep individual parts separated and protected. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.
| EDA / CAD Models |
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