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onsemiNGTB30N120LWGIGBT-Chip
Trans IGBT Chip N-CH 1200V 60A 560W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 1200 | |
| 1.75 | |
| 60 | |
| 0.1 | |
| 560 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.08(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 16.26(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Don't be afraid to step up the amps in your device when using this NGTB30N120LWG IGBT transistor from ON Semiconductor. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 560000 mW. This product comes in rail packaging to keep individual parts separated and protected. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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