onsemiNGTB35N65FL2WGIGBT-Chip
Trans IGBT Chip N-CH 650V 70A 300W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Field Stop II|Trench | |
| N | |
| Single | |
| ±20 | |
| 650 | |
| 1.7 | |
| 70 | |
| 0.2 | |
| 300 | |
| -55 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21 mm |
| Verpackungsbreite | 5 mm |
| Verpackungslänge | 16 mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
You can use this NGTB35N65FL2WG IGBT transistor from ON Semiconductor as an electronic switch. Its maximum power dissipation is 300000 mW. It has a maximum collector emitter voltage of 650 V. This device utilizes field stop ii|trench technology. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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