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onsemiNGTB40N60IHLWGIGBT-Chip
Trans IGBT Chip N-CH 600V 80A 250W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 2 | |
| 80 | |
| 0.1 | |
| 250 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.34(Max) mm |
| Verpackungsbreite | 5.3(Max) mm |
| Verpackungslänge | 16.25(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
This NGTB40N60IHLWG IGBT transistor from ON Semiconductor is perfect if your circuit contains high currents passing through it. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 600 V. This product comes in rail packaging to keep individual parts separated and protected. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |
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