onsemiNGTB40N65IHL2WGIGBT-Chip
Trans IGBT Chip N-CH 650V 80A 300W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Field Stop|Trench | |
| N | |
| Single | |
| ±20 | |
| 650 | |
| 1.8 | |
| 80 | |
| 0.1 | |
| 300 | |
| -55 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.34(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.25(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
Minimize the current at your gate with the NGTB40N65IHL2WG IGBT transistor from ON Semiconductor. Its maximum power dissipation is 300000 mW. It has a maximum collector emitter voltage of 650 V. This product comes in rail packaging to keep individual parts separated and protected. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration. This device is made with field stop|trench technology.
| EDA / CAD Models |
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