onsemiNGTG50N60FLWGIGBT-Chip
Trans IGBT Chip N-CH 600V 100A 223W 3-Pin(3+Tab) TO-247 Tube
| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| N | |
| Single | |
| ±20 | |
| 600 | |
| 1.65 | |
| 100 | |
| 0.2 | |
| 223 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 21.08(Max) |
| Verpackungsbreite | 5.3(Max) |
| Verpackungslänge | 16.26(Max) |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | TO-247 |
| 3 | |
| Leitungsform | Through Hole |
This fast-switching NGTG50N60FLWG IGBT transistor from ON Semiconductor will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 223000 mW. This product comes in rail packaging to keep individual parts separated and protected. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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