| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | Yes |
| PPAP | No |
| Power MOSFET | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 59 | |
| ±15 | |
| 2.5 | |
| 9 | |
| 10000 | |
| 10 | |
| 181@4V | |
| 4.5@4.5V | |
| 155@40V|175@25V | |
| 1740 | |
| 1100|1800|1150 | |
| 500|275 | |
| 1600|2500|1300 | |
| 120|200|130 | |
| -55 | |
| 175 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
As an alternative to traditional transistors, the NID9N05CLT4G power MOSFET from ON Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1740 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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