Meist Gekauft
onsemiNJT4031NT1GGP BJT
Trans GP BJT NPN 40V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Power | |
| Si | |
| Single Dual Collector | |
| 1 | |
| 40 | |
| 40 | |
| 6 | |
| -55 to 150 | |
| 1 | |
| 1@0.1A@1A | |
| 0.1@5mA@0.5A|0.15@10mA@1A|0.3@0.3A@3A | |
| 3 | |
| 100 | |
| 220@0.5A@1V|200@1A@1V|100@3A@1V | |
| 2000 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.57 |
| Verpackungsbreite | 3.5 |
| Verpackungslänge | 6.5 |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-223 |
| 4 | |
| Leitungsform | Gull-wing |
If you require a general purpose BJT that can handle high voltages, then the NPN NJT4031NT1G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.