onsemiNSBC114EDP6T5GDigital-BJT
Trans Digital BJT NPN 50V 0.1A 408mW 6-Pin SOT-963 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Dual | |
| 50 | |
| 0.1 | |
| 35@5mA@10V | |
| 10 | |
| -55 to 150 | |
| 1 | |
| 0.25@0.3mA@10mA | |
| 408 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 30 to 50 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.37 mm |
| Verpackungsbreite | 0.8 mm |
| Verpackungslänge | 1 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-963 |
| 6 | |
| Leitungsform | Flat |
Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the NPN NSBC114EDP6T5G digital transistor from ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 408 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a dual configuration.
| EDA / CAD Models |
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