onsemiNSBC114EDXV6T1GDigital-BJT
Trans Digital BJT NPN 50V 0.1A 500mW 6-Pin SOT-563 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Dual | |
| 50 | |
| 0.1 | |
| 35@5mA@10V | |
| 10 | |
| -55 to 150 | |
| 1 | |
| 0.25@0.3mA@10mA | |
| 500 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 30 to 50 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.55 mm |
| Verpackungsbreite | 1.2 mm |
| Verpackungslänge | 1.6 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-563 |
| 6 | |
| Leitungsform | Flat |
If you are building a digital signal processing device, make sure to use ON Semiconductor's NPN NSBC114EDXV6T1G digital transistor's within your circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a dual configuration. This transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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