onsemiNSBC114EPDP6T5GDigital-BJT
Trans Digital BJT NPN/PNP 50V 0.1A 408mW 6-Pin SOT-963 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Dual | |
| 50 | |
| 0.1 | |
| 35@5mA@10V | |
| 10 | |
| 1 | |
| 0.25@0.3mA@10mA | |
| 408 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.37 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-963 |
| 6 | |
| Leitungsform | Flat |
Do you need a device that can offer the benefits of traditional BJTs with the compatibility for digital signal processors? The npn and PNP NSBC114EPDP6T5G digital transistor from ON Semiconductor is your solution. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 35@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 408 mW. It has a maximum collector emitter voltage of 50 V. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It is made in a dual configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
UAV-Bedrohungen wirksam abwehren
So entsteht ein integriertes Counter-UAV-Abwehrsystem mit Intelligent Processing, Sensorik und Rapid Response.