onsemiNSBC143ZPDXV6T1GDigital-BJT
Trans Digital BJT NPN/PNP 50V 0.1A 500mW 6-Pin SOT-563 T/R
| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| NPN|PNP | |
| Dual | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 4.7 | |
| 0.1 | |
| 0.25@1mA@10mA | |
| 500 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.55 mm |
| Verpackungsbreite | 1.2 mm |
| Verpackungslänge | 1.6 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-563 |
| 6 | |
| Leitungsform | Flat |
Ensure the proper transistor is used within your digital processing unit by using ON Semiconductor's npn and PNP NSBC143ZPDXV6T1G digital transistor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a dual configuration.
| EDA / CAD Models |
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