| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.75 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Power | |
| Single | |
| 1 | |
| 140 | |
| 100 | |
| 6 | |
| -65 to 150 | |
| 0.5 | |
| 1@0.1A@1A | |
| 0.07@10mA@0.1A|0.15@0.1A@1A|0.25@0.2A@2A|0.4@0.3A@3A | |
| 3 | |
| 100 | |
| 180@0.1A@2V|180@500mA@2V|120@1A@2V|50@3A@2V | |
| 2100 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.28 mm |
| Verpackungsbreite | 6.1 mm |
| Verpackungslänge | 6.54 mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
If you require a general purpose BJT that can handle high voltages, then the PNP NSS1C300ET4G BJT, developed by ON Semiconductor, is for you. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 2100 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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