onsemiNSV40201LT1GGP BJT
Trans GP BJT NPN 40V 2A 540mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Yes |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 40 | |
| 40 | |
| 6 | |
| -55 to 150 | |
| 0.9@10mA@1A | |
| 0.011@0.01A@0.1A|0.06@0.1A@1A|0.115@0.01A@1A|0.115@0.2A@2A | |
| 2 | |
| 200@10mA@2V|200@500mA@2V|180@1A@2V|180@2A@2V | |
| 540 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.94 mm |
| Verpackungsbreite | 1.3 mm |
| Verpackungslänge | 2.9 mm |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-23 |
| 3 | |
| Leitungsform | Gull-wing |
Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the NPN NSV40201LT1G general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 540 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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