onsemiNSVDTA115EET1GDigital-BJT
Trans Digital BJT PNP 50V 0.1A 600mW 3-Pin SOT-416 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| Automotive | Yes |
| PPAP | Yes |
| PNP | |
| Single | |
| 50 | |
| 0.1 | |
| 80@5mA@10V | |
| 100 | |
| 1 | |
| 0.25@0.3mA@10mA | |
| 600 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75 |
| Verpackungsbreite | 0.8 |
| Verpackungslänge | 1.6 |
| Leiterplatte geändert | 3 |
| Standard-Verpackungsname | SOT |
| Lieferantenverpackung | SOT-416 |
| 3 | |
| Leitungsform | Gull-wing |
In contrast to traditional transistors, ON Semiconductor's PNP NSVDTA115EET1G digital transistor's can be used in a wide variety of digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 600 mW. It is made in a single configuration. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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