| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±15 | |
| 2 | |
| 25 | |
| 100 | |
| 1 | |
| 80@5V | |
| 15@5V|23.6@4.5V|75@10V | |
| 75 | |
| 900@25V | |
| 75000 | |
| 16 | |
| 37 | |
| 15 | |
| 9 | |
| -55 | |
| 150 | |
| Tube | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the NTD25P03LG power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 75000 mW. This product comes in rail packaging to keep individual parts separated and protected. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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