| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 13.8 | |
| 8@11.5V | |
| 11.3@4.5V|26@11.5V | |
| 1538@12V | |
| 2630 | |
| 6|3.5 | |
| 21.3|19.5 | |
| 14.6|23 | |
| 12.3|7.7 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 2.38(Max) mm |
| Verpackungsbreite | 6.22(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 2 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | DPAK |
| 3 | |
| Leitungsform | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the NTD4808NT4G power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 2630 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
| EDA / CAD Models |
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