| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 100 | |
| ±20 | |
| 32 | |
| 37@10V | |
| 40@10V | |
| 40 | |
| 1450@25V | |
| 100000 | |
| 48 | |
| 52 | |
| 38 | |
| 11 | |
| -55 | |
| 175 | |
| Tube | |
| Befestigung | Through Hole |
| Verpackungshöhe | 6.35(Max) mm |
| Verpackungsbreite | 2.38(Max) mm |
| Verpackungslänge | 6.73(Max) mm |
| Leiterplatte geändert | 3 |
| Tab | Tab |
| Standard-Verpackungsname | TO |
| Lieferantenverpackung | IPAK |
| 3 | |
| Leitungsform | Through Hole |
Looking for a component that can both amplify and switch between signals within your circuit? The NTD6414AN-1G power MOSFET from ON Semiconductor provides the solution. Its maximum power dissipation is 100000 mW. This product comes in rail packaging to keep individual parts separated and protected. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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