| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 3.3 | |
| 90@4.5V | |
| 6.2@4.5V | |
| 480@5V | |
| 2000 | |
| 24 | |
| 23.5 | |
| 27 | |
| 13 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 |
| Verpackungsbreite | 1.5 |
| Verpackungslänge | 3 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 | |
| Leitungsform | Gull-wing |
Thanks to ON Semiconductor, both your amplification and switching needs can be taken care of with one component: the NTGS3441T1G power MOSFET. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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