| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 20 | |
| ±12 | |
| 1.2 | |
| -55 to 150 | |
| 5.1 | |
| 100 | |
| 1 | |
| 45@4.5V | |
| 8@4.5V | |
| 2 | |
| 2 | |
| 10 | |
| 510@10V | |
| 60@10V | |
| 0.6 | |
| 200 | |
| 2000 | |
| 20 | |
| 12 | |
| 35 | |
| 9 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| 36@4.5V|44@2.5V | |
| 2 | |
| 20 | |
| 244 | |
| 0.74 | |
| 2 | |
| 20 | |
| 1.1 | |
| 0.85 | |
| 12 | |
| 3.6 | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 mm |
| Verpackungsbreite | 1.5 mm |
| Verpackungslänge | 3 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 | |
| Leitungsform | Gull-wing |
Make an effective common source amplifier using this NTGS3446T1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 1000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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