| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 30 | |
| ±20 | |
| 3.5 | |
| 100@10V | |
| 9@10V | |
| 9 | |
| 480@5V | |
| 2000 | |
| 10 | |
| 15 | |
| 20 | |
| 10 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.9 mm |
| Verpackungsbreite | 1.5 mm |
| Verpackungslänge | 3 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | SO |
| Lieferantenverpackung | TSOP |
| 6 | |
| Leitungsform | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the NTGS3455T1G power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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