| Compliant | |
| EAR99 | |
| Active | |
| NTHD4102PT1G | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| P | |
| 2 | |
| 20 | |
| ±8 | |
| 1.5 | |
| 2.9 | |
| 100 | |
| 1 | |
| 80@4.5V | |
| 7.6@4.5V | |
| 750@16V | |
| 1100 | |
| 23 | |
| 12 | |
| 32 | |
| 5.5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05 mm |
| Verpackungsbreite | 1.65 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | Chip FET |
| 8 | |
| Leitungsform | Flat |
Compared to traditional transistors, NTHD4102PT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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