10-25% Rabatt
onsemiNTHD4508NT1GMOSFETs
Trans MOSFET N-CH 20V 3A 8-Pin Chip FET T/R
| Compliant | |
| EAR99 | |
| Obsolete | |
| NTHD4508NT1G | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Dual Dual Drain | |
| Enhancement | |
| N | |
| 2 | |
| 20 | |
| ±12 | |
| 3 | |
| 75@4.5V | |
| 2.6@4.5V | |
| 180@10V | |
| 1130 | |
| 3 | |
| 15 | |
| 10 | |
| 5 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05 mm |
| Verpackungsbreite | 1.65 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | Chip FET |
| 8 | |
| Leitungsform | Flat |
Create an effective common drain amplifier using this NTHD4508NT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 1130 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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