| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Hex Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±12 | |
| 3.9 | |
| 46(Typ)@4.5V | |
| 9.7@4.5V | |
| 710@5V | |
| 2500 | |
| 35 | |
| 22 | |
| 42 | |
| 14 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05 mm |
| Verpackungsbreite | 1.65 mm |
| Verpackungslänge | 3.05 mm |
| Leiterplatte geändert | 8 |
| Lieferantenverpackung | Chip FET |
| 8 | |
| Leitungsform | Flat |
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? ON Semiconductor's NTHS5441T1G power MOSFET can provide a solution. Its maximum power dissipation is 1300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |
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