| Compliant | |
| EAR99 | |
| Active | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±8 | |
| 3.7 | |
| 70@4.5V | |
| 5.4@4.5V | |
| 427@15V | |
| 2300 | |
| 1.7 | |
| 9.2 | |
| 14.2 | |
| 4.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) mm |
| Verpackungsbreite | 2 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | WDFN EP |
| 6 | |
| Leitungsform | No Lead |
Make an effective common gate amplifier using this NTLJF4156NT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 1500 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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