| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±8 | |
| 3.7 | |
| 70@4.5V | |
| 5.4@4.5V | |
| 427@15V | |
| 2300 | |
| 1.7 | |
| 9.2 | |
| 14.2 | |
| 4.8 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.75(Max) mm |
| Verpackungsbreite | 2 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | WDFN EP |
| 6 | |
| Leitungsform | No Lead |
This NTLJF4156NTAG power MOSFET from ON Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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