| Compliant | |
| EAR99 | |
| Obsolete | |
| COMPONENTS | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| P | |
| 1 | |
| 20 | |
| ±8 | |
| 1 | |
| 8.2 | |
| 5000 | |
| 1 | |
| 18@4.5V | |
| 28@4.5V | |
| 2240@15V | |
| 3800 | |
| 88 | |
| 15 | |
| 150 | |
| 8.6 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.5(Max) |
| Verpackungsbreite | 2 |
| Verpackungslänge | 2 |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | UDFN EP |
| 6 |
Thanks to ON Semiconductor, both your amplification and switching needs can be taken care of with one component: the NTLUS3A18PZTAG power MOSFET. Its maximum power dissipation is 3800 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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