| Compliant | |
| EAR99 | |
| Obsolete | |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ±20 | |
| 2.2 | |
| 6.1 | |
| 10000 | |
| 1 | |
| 28.5@10V | |
| 4.8@4.5V|8.7@10V | |
| 8.7 | |
| 476@15V | |
| 3800 | |
| 3.3|2.2 | |
| 14.4|12.2 | |
| 9.1|11.6 | |
| 8.7|4.1 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 0.5(Max) mm |
| Verpackungsbreite | 2 mm |
| Verpackungslänge | 2 mm |
| Leiterplatte geändert | 6 |
| Standard-Verpackungsname | DFN |
| Lieferantenverpackung | UDFN EP |
| 6 |
Increase the current or voltage in your circuit with this NTLUS4930NTAG power MOSFET from ON Semiconductor. Its maximum power dissipation is 1650 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| EDA / CAD Models |
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