Reduced Price
onsemiNTMFS4119NT1GMOSFETs
Trans MOSFET N-CH 30V 18A 5-Pin SO-FL EP T/R
| Compliant with Exemption | |
| EAR99 | |
| Obsolete | |
| 8541.21.00.95 | |
| SVHC | Yes |
| SVHC überschreitet Schwellenwert | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single Quad Drain Triple Source | |
| Enhancement | |
| N | |
| 1 | |
| 30 | |
| ± 20 | |
| 18 | |
| 3.5@10V | |
| 36.8@4.5V | |
| 4800@24V | |
| 6100 | |
| 40 | |
| 26 | |
| 35 | |
| 28 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Befestigung | Surface Mount |
| Verpackungshöhe | 1.05(Max) mm |
| Verpackungsbreite | 5.9 mm |
| Verpackungslänge | 4.9 mm |
| Leiterplatte geändert | 5 |
| Lieferantenverpackung | SO-FL EP |
| 5 | |
| Leitungsform | No Lead |
Make an effective common gate amplifier using this NTMFS4119NT1G power MOSFET from ON Semiconductor. Its maximum power dissipation is 2300 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
KI-Systeme in der Medizin
Design-Tipps, empfohlene Komponenten und KI-Insights für bessere Diagnose- und Therapiegeräte – im aktuellen Whitepaper.

